https://scholars.lib.ntu.edu.tw/handle/123456789/120928
標題: | 發光二極體內不同後生長條件對氮化銦鎵/氮化鎵量子井結構之電子顯微術材料特性研究 Transmission Electron Microscopy Studies on InGaN/GaN Quantum-well Structures under Different Overgrowth Conditions in Light-emitting Diodes |
作者: | 吳聲霈 Wu, Sheng-Pei |
關鍵字: | 發光二極體;氮化鎵;電子顯微術;Light-emitting Diodes;LED;InGaN;Transmission Electron Microscopy | 公開日期: | 2011 | 摘要: | 在製作氮化銦鎵/氮化鎵量子井發光二極體的長晶過程中,p型氮化鎵鋁的電子阻隔層和p型氮化鎵層所使用的高溫環境能優化量子井的內部量子效率。在成長p型氮化鎵鋁的電子阻隔層和p型氮化鎵層的過程中,量子井會因為高溫熱退火而使它重整銦聚集結構並達到加強載子局部化效果.除此之外,較弱的載子局部化會造成樣品有較低的內部量子效率. 在本研究中,我們以高解析穿透式電子顯微鏡術、應變分析模擬軟體、X光繞射分析儀、氮化銦鎵半導體雷射 (406nm)激發量測隨溫度變化的螢光頻譜,觀察不同樣品之量子井的特性並比較。 The objective of this research is to use the methods of high resolution transmission electron microscope (HRTEM) and strain-state analysis (SSA) to compare the nanostructures of InGaN/GaN quantum wells (QWs) under different growth conditions. We find that in a high-indium InGaN/GaN QW light-emitting diodes, the thickness of the p-AlGaN and p-GaN layers can be optimized for maximizing the QW internal quantum efficiency (IQE). During the growths of the p-AlGaN and p-GaN layers, the QWs are thermally annealed to first enhance carrier localization by reshaping the structures of indium-rich clusters before the optimized annealing time is reached. Beyond this point, the carrier localization effect is weakened, leading to lower IQE. The results of SSA in the HRTEM study show the consistent trend. |
URI: | http://ntur.lib.ntu.edu.tw//handle/246246/253575 |
顯示於: | 光電工程學研究所 |
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ntu-100-R97941096-1.pdf | 23.32 kB | Adobe PDF | 檢視/開啟 |
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