Semiconductor lasers tunable from 1.3 �gm to 1.54 �gm for optical communication
Resource
Proceedings SPIE, 4653, 96-104
Journal
Proceedings of SPIE - The International Society for Optical Engineering
Journal Volume
4653
Journal Issue
4653
Pages
96-104
Date Issued
2002
Date
2002
Author(s)
Abstract
Extremely broadband tunability of semiconductor lasers is achieved. The tuning range covers from 1300 nm to 1540 nm using nonidentical multiple quantum wells (MQWs) in the gain media. The broadband gain medium has two In0.53Ga0.47As quantum wells (Qws) near the n-cladding layer and three In0.67Ga0.33As0.72P0.28 Qws near the p-cladding layer. The sequence of the MQWs is also found to be very influential on the tuning range. For the sequence opposite to the above one, the tuning range is only from 1290 nm to 1450 nm. The reason is because the well sequence influences the carrier distribution. The broadband tunability is possible only when the QW structure could have a better uniformity of carrier distribution.
SDGs
Type
conference paper
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