https://scholars.lib.ntu.edu.tw/handle/123456789/121062
標題: | DC characteristics and high frequency response from GaN nanowire metal-oxide-semiconductor field-effect transistor | 作者: | Yu, Jeng-Wei Wu, Han-Min Yeh, Bo-Chun LUNG-HAN PENG |
公開日期: | 2009 | 卷: | 6 | 期: | SUPPL. 2 | 起(迄)頁: | S535-S537 | 來源出版物: | Physica Status Solidi (C) Current Topics in Solid State Physics | 摘要: | We report selected site lateral growth of crystalline [11$ \bar 2 $0] GaN nanowire (NW) with high channel mobility of 1050 cm2/V-s on SiO2/p-Si. This scheme enables photolithographic fabrication of top-gated GaN NW-MOSFET of 60 nm dia. and 2 μm gate length. Device parameters with gm of 25 μS, saturation current of 90 μA, and cut-off frequency fT at 14 GHz have been extracted. In an active load configuration of GaN NW-MOSFET inverter we reported voltage gain of 2 and a high current on/off ratio of 104. These observations suggest promising functional diversification of the GaN NW-MOSFET on the Si-based CMOS platform for the sub-50 nm technology nodes. © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. |
URI: | http://ntur.lib.ntu.edu.tw//handle/246246/237257 https://www.scopus.com/inward/record.uri?eid=2-s2.0-79251633507&doi=10.1002%2fpssc.200880816&partnerID=40&md5=97c9f50cac60d946535861f0e4390a9f |
ISSN: | 18626351 | DOI: | 10.1002/pssc.200880816 | SDG/關鍵字: | Active load; Channel mobility; Cut-off; DC characteristics; Device parameters; GaN nanowires; Gate length; High currents; High frequency response; Lateral growth; Metal-oxide-semiconductor field-effect transistor; MOS-FET; On/off ratio; Saturation current; Si-based; Sub-50 nm; Technology nodes; Voltage gain; Field effect transistors; Frequency response; Gallium alloys; Gallium nitride; Nanowires; Semiconducting silicon compounds; Semiconductor growth; MOSFET devices |
顯示於: | 光電工程學研究所 |
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