https://scholars.lib.ntu.edu.tw/handle/123456789/147084
標題: | Monolithic InGaP-GaAs HBT receiver front-end with 6mW DC power consumption for 5 GHz band WLAN applications | 作者: | Yeh, K.Y. Lu, S.S. Lin, Y.S. |
公開日期: | 十一月-2004 | 出版社: | 臺北市:國立臺灣大學電機工程學系 | 摘要: | A very low power consumption (6 mW) 5 GHz band receiver frontend using InGaP-GaAs HBT technology is reported. The receiver front-end is composed of a cascode low noise amplifier followed by a double-balanced mixer with the RF transconductor stage placed above the Gilbert quad for direct-coupled connection. The RF band of this receiver front-end is set to be 5.2 GHz, being downconverted to 1 GHz IF frequency. Input-return-loss (S11) in RF port smaller than 12 dB and excellent power-conversion-gain of 35.4 dB are achieved. Input 1 dB compression point (P1dB) and input third-order intercept point (IIP3) of 24 and 3 dBm, respectively, are also achieved. |
URI: | http://ntur.lib.ntu.edu.tw//handle/246246/20060927122737679250 | 其他識別: | 20060927122737679250 |
顯示於: | 電機工程學系 |
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01363665.pdf | 270.74 kB | Adobe PDF | 檢視/開啟 |
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