https://scholars.lib.ntu.edu.tw/handle/123456789/147592
標題: | Oxide Resistance Characterization in MOS structures by the Voltage Decay Method | 作者: | Hwu, Jenn-Gwo Ho, I-Hsiu |
關鍵字: | Gate oxide; MOS structure; Resistance | 公開日期: | 七月-1990 | 出版社: | Taipei:National Taiwan University DEPT ELECT ENGN | 期: | No. 7 | 起(迄)頁: | 1243-1247 | 來源出版物: | JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 29 | 摘要: | The resistances of the gate oxides in MOS structures are determined based on the voltage decay method proposed in this work. This method provides nondestructive measurement of the oxide. The oxide resistance obtained by this method can be as high as 1014 ohms. Also, the unreliability of the data obtained by the conventional method, i.e., by dividing the applied voltage by the measured current, is compared. It is found that samples having the same initial C-V behavior can show significant differences in their oxide resistances. The one having a high oxide resistance can sustain a higher breakdown voltage than that having a low oxide resistance. A possible mechanism of the oxide resistance and the usability of the voltage decay method are also discussed. © 1990 The Japan Society of Applied Physics. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0025454106&doi=10.1143%2fJJAP.29.1243&partnerID=40&md5=9ed0e8ce531acf50a3d22140fb5b5548 | 其他識別: | 246246/200611150121942 | DOI: | 10.1143/JJAP.29.1243 | SDG/關鍵字: | Electric Measurements - Resistance; Oxides - Electric Conductivity; Semiconducting Silicon; Gate Oxides; Semiconductor Devices, MOS |
顯示於: | 電機工程學系 |
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