Si-containing crystalline carbon nitride derived from microwave plasma-enhanced chemical vapor deposition
Resource
Thin Solid Films 303 (1997) 66-75
Journal
Thin Solid Films
Journal Volume
303
Journal Issue
1997
Pages
66-75
Date Issued
1997
Date
1997
Author(s)
Chen, L.C.
Bhusari, D.M.
Yang, C.Y.
Chen, K.H.
Chuang, T.J.
Lin, M.C.
Chen, C.K.
Huang, Y.F.
DOI
246246/2006111501243744
Abstract
Carbon nitride thin films have been grown by the microwave plasma-enhanced chemical vapor deposition (MW-PECVD) technique.
Gas mixtures containing CH4, H 2 and NH 3 at various ratios were tested as precursors, and Si (t00) wafers were used as substrates. X-ray
photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), electron microscopy (both SEM and TEM), and Raman
spectroscopy have been employed to characterize the resultant films. The phase contents in the films were found to be strongly dependent
on the substrate temperature. The incorporation of significant amounts of Si into the film was observed when the substrate temperature
exceeded 1000 °C. However, the presence of Si along with a high substrate temperature also promotes the formation of large crystallites.
XPS analyses of C(ls) and N(ls) core levels suggest a multiple bonding structure between carbon and nitrogen atoms. Microscopic
investigations of the films reveal the coexistence of large grain (> 10 ~zm) and fine grain (< 1 ~m) crystals. Preliminary structural
studies suggest the presence of a crystalline carbon nitride compound corresponding to a hypothetical e~-C3N 4 phase (isomorphic to
et-Si3N4), which may also be a stable hard material. Furthermore, we propose that some of the Si has been incorporated as a
substitutional element for the C site in the new phase. The Raman spectra exhibit many sharp lines, of which the most distinct ones mimic
those of the (x-Si3N 4 structure. © 1997 Elsevier Science S.A.
Gas mixtures containing CH4, H 2 and NH 3 at various ratios were tested as precursors, and Si (t00) wafers were used as substrates. X-ray
photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), electron microscopy (both SEM and TEM), and Raman
spectroscopy have been employed to characterize the resultant films. The phase contents in the films were found to be strongly dependent
on the substrate temperature. The incorporation of significant amounts of Si into the film was observed when the substrate temperature
exceeded 1000 °C. However, the presence of Si along with a high substrate temperature also promotes the formation of large crystallites.
XPS analyses of C(ls) and N(ls) core levels suggest a multiple bonding structure between carbon and nitrogen atoms. Microscopic
investigations of the films reveal the coexistence of large grain (> 10 ~zm) and fine grain (< 1 ~m) crystals. Preliminary structural
studies suggest the presence of a crystalline carbon nitride compound corresponding to a hypothetical e~-C3N 4 phase (isomorphic to
et-Si3N4), which may also be a stable hard material. Furthermore, we propose that some of the Si has been incorporated as a
substitutional element for the C site in the new phase. The Raman spectra exhibit many sharp lines, of which the most distinct ones mimic
those of the (x-Si3N 4 structure. © 1997 Elsevier Science S.A.
Subjects
Chemical vapour deposition (CVD)
Nitrides
Transmission electron microscopy (TEM)
X-ray photoelectron spectroscopy (XPS)
Publisher
Taipei:National Taiwan University DEPT ELECT ENGN
Type
journal article
File(s)![Thumbnail Image]()
Loading...
Name
9891.pdf
Size
22.97 KB
Format
Adobe PDF
Checksum
(MD5):6d2e1bc7d319e665ca529282576e6520