|Title:||Reduction in Leakage Current of Low-Temperature Thin-Gate Oxide by Repeated Spike Oxidation Technique||Authors:||Hong, Chao-Chi
|Keywords:||Leakage current density;low temperature oxidation;MOS device;repeated spike oxidation||Issue Date:||Jan-2002||Publisher:||Taipei:National Taiwan University Dept Mech Engn||Journal Volume:||VOL. 23||Journal Issue:||NO. 1||Start page/Pages:||-||Source:||IEEE ELECTRON DEVICE LETTERS||Abstract:||
A novel repeated spike oxidation (RSO) technique
had been used to grow low-temperature thin-gate oxide. Around
the similar effective oxide thickness extracted from the capacitance-
voltage (C–V) curves under quantum mechanical effect
consideration, the leakage currents of RSO samples were near
one order of magnitude lower than those of typical ones. Flat
band voltage shift or electron trapping in RSO oxides during
current-voltage (I–V) measurement had not been observed. The
reduction of interface state densities and the improvement in
oxide uniformity would be the possible reasons for the reduction
in leakage currents of RSO samples.
|Appears in Collections:||電機工程學系|
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