Reduction in Leakage Current of Low-Temperature Thin-Gate Oxide by Repeated Spike Oxidation Technique
Resource
IEEE ELECTRON DEVICE LETTERS, VOL. 23, NO. 1, JANUARY 2002
Journal
IEEE ELECTRON DEVICE LETTERS
Journal Volume
VOL. 23
Journal Issue
NO. 1
Pages
-
Date Issued
2002-01
Date
2002-01
Author(s)
DOI
246246/200611150121582
Abstract
A novel repeated spike oxidation (RSO) technique
had been used to grow low-temperature thin-gate oxide. Around
the similar effective oxide thickness extracted from the capacitance-
voltage (C–V) curves under quantum mechanical effect
consideration, the leakage currents of RSO samples were near
one order of magnitude lower than those of typical ones. Flat
band voltage shift or electron trapping in RSO oxides during
current-voltage (I–V) measurement had not been observed. The
reduction of interface state densities and the improvement in
oxide uniformity would be the possible reasons for the reduction
in leakage currents of RSO samples.
Subjects
Leakage current density
low temperature oxidation
MOS device
repeated spike oxidation
Publisher
Taipei:National Taiwan University Dept Mech Engn
Type
journal article
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