https://scholars.lib.ntu.edu.tw/handle/123456789/149330
標題: | Ka-band monolithic GaAs PHEMT circuits for transceiver applications | 作者: | Lien, Chun-Hsien Deng, Kuo-Liang Liu, Chieh-Chao Chou, Hua-Shan HUEI WANG |
公開日期: | 十二月-2000 | 起(迄)頁: | - | 來源出版物: | Microwave Conference, 2000 Asia-Pacific | 摘要: | This paper presents the development of a one-stage and a two-stage Ka-band monolithic LNA for commercial wireless communication applications. The monolithic microwave/millimeter-wave integrated circuits (MMICs) are fabricated with a 0.2-μm pseudomorphic (PM) GaAs-based HEMT technology, carried out by commercially available foundry. The one-stage amplifier demonstrated a measured small signal gain of 9.5 dB with a noise figure (NF) of 2.7 dB at 28 GHz, while the two-stage amplifier has a measured gain of 17 dB with 3.3 dB NF at 28 GHz. Due to fabrication with the commercial foundry process, these MMICs have the potential for mass production. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0033344188&partnerID=40&md5=20d95775c530446ef6bf4705e53b5014 | 其他識別: | N/A | DOI: | 10.1109/APMC.2000.926039 | SDG/關鍵字: | High electron mobility transistors; Monolithic microwave integrated circuits; Semiconducting gallium arsenide; Wireless telecommunication systems; Low noise amplifiers (LNA); Microwave amplifiers |
顯示於: | 電機工程學系 |
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00926039.pdf | 143.02 kB | Adobe PDF | 檢視/開啟 |
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