以矽晶圓為基礎的長波長紅外線偵測器(新型SiGeC 材料之研究)
Date Issued
1998-07-31
Date
1998-07-31
Author(s)
DOI
872215E002032
Abstract
The thermal stability of Si/Si1-xy
GexCy/Si quantum wells was studied
by high resolution x-ray
diffraction(Fig.1, 2, 3), Fourier
transform infrared spectroscopy, and
defect ecthing. There are different
pathways of strain relaxation in this
mater system, depending on the
annealing temperature. The lattice
structure of Si1-x-yGexCy was as stable as
the Si1-xGex alloys at the annealing
temperature of 800℃ for 2hr. At the
annealing temperature of 900℃ for 2hr,
the structures of both Si1-x-yGexCy and
Si1-xGex started to relax. The addition of
C enhanced the Ge outdiffusion in Si1-xy
GexCy, as compared to Si1-xGex. The Ge
also outdiffused relatively fast compared
to C in Si1-x-yGexCy alloys(Fig 4). For the
annealing temperature of 950 ℃ and
1000℃ for 2hr, the Si1-xGex and Si1-xy
GexCy continued to relaxed with the
decrease of strain in the quantum wells,
but the thickness of Si1-x-yGexCy was
below the critical thickness. The
abnormal forrnation of misfit dislocation
is probably caused by the SiC
precipitate.
Publisher
臺北市：國立臺灣大學電機工程學系暨研究所
Type
report
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