以分子束磊晶法成長氮化鎵系列材料(II)

In this study, we report the effect of
growth condition on the surface morphology
of the initial buffer layer for cubic GaN
grown by using RF plasma assisted
molecular beam epitaxy. Buffer layers
roughness was monitored by RHEED and
Atomic Force Microscopy. X-ray diffraction
measurement and photoluminescence were
used to investigate the film quality. The bulk
cubic GaN film grown on the optimized
initial buffer layer demonstrates high phase
purity, narrow X-ray FWHM and strong
cubic GaN related band to band emission.