Novel electroluminescence from metal-insulator-semiconductor (MIS) structures on Si
Journal
Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
Journal Volume
2000-January
Pages
403-406
Date Issued
Dec-00
Date
Dec-00
Author(s)
DOI
N/A
Abstract
Room temperature electroluminescence from metal-insulator-semiconductor (MIS) structures on Si was observed. Several types of MIS structures such as Al/SiO2/Si, ITO/SiO2/Si, and mechanically pressed ITO/Si contact, has been investigated. Both band-edge and visible electroluminescence are observed from the ITO/SO2/Si structures. The devices based on the Al/SiO2/Si structure exhibit efficient band-edge electroluminescence. Electroluminescence near the silicon bandgap energy is also achieved from MIS structures using an innovative mechanically pressed ITO/Si contact. Optical phonons, interface roughness, localized carriers and impact ionization are used to explain radiative recombination in MIS structures. © 2000 IEEE.
Event(s)
Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000
Other Subjects
Aluminum; Electroluminescence; Impact ionization; Metal insulator boundaries; Microelectronics; MIS devices; Semiconductor insulator boundaries; Band edge; Interface roughness; Localized carriers; Metal insulator semiconductor structures; MIS structure; Optical phonons; Radiative recombination; Silicon band gap; Semiconducting silicon
Type
conference paper
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