MOS Ge/Si quantum dot infrared photodetectors with quantum dot and wetting layer responses
Resource
Semiconductor Device Research Symposium, 2003 International
Journal
Semiconductor Device Research Symposium, 2003 International
Pages
-
Date Issued
2003-12
Date
2003-12
Author(s)
DOI
N/A
Abstract
A 5-period self-assembled Ge/Si quantum dots with 3 nm wetting (quantum wells) grown by UHV/CVD is fabricated into MIS tunneling diodes with low temperature (50 /spl deg/C) liquid phase deposition (LPD) oxide and oxynitride. The dark current of MIS tunneling diode is dominated by thermal generation of electron-hole pairs through the defects in the depletion region and at the Si/SiO/sub 2/ interface. Using oxynitride as gate dielectric, the operating temperature reaches 140 K for 3/spl sim/10/spl mu/m and is up to 200 K for 2/spl sim/3 /spl mu/m detection.
SDGs
Type
journal article
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