High efficient 820 nm MOS Ge quantum dot photodetectors for short-reach integrated optical receivers with 1300 and 1550 nm sensitivity
Resource
Electron Devices Meeting, 2002. IEDM '02. Digest. International
Journal
Electron Devices Meeting, 2002. IEDM '02. Digest. International
Pages
-
Date Issued
2002-12
Date
2002-12
Author(s)
Hsu, B.C.
Chang, S.T.
Shie, C.R.
Lai, C.C.
Chen, P.S.
Liu, C.W.
DOI
N/A
Abstract
A metal-oxide-semiconductor (MOS) Ge quantum dot photodetector is demonstrated. The oxide is grown directly on Ge substrate by liquid phase deposition (LPD). The photodetector has the responsivity of 130, 0.16, and 0.08 mA/W under the wavelength of 820 nm, 1300 nm, and 1550 nm, respectively. The dark current is extremely low (0.06 mA/cm/sup 2/). The high performance of Ge quantum dot MOS photodetectors at 820 nm makes it feasible to integrate optoelectronic devices into the Si chip for short-reach optical communication.
SDGs
Type
journal article
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