The effect of extrinsic capacitances on the microwave performance of Ga0.51In0.49P/GaAs MISFETs (0 nm ≦ t ≦10 nm) grown by GSMBE

Journal

International Semiconductor Conference, 1996

Pages

659-662

Date Issued

1996

Author(s)

Lin, Yo-Sheng

DOI

10.1109/SMICND.1996.557478

URI

http://ntur.lib.ntu.edu.tw/bitstream/246246/2007041910031963/1/00557478.pdf

Type

journal article

File(s)

Name

00557478.pdf

Size

352.11 KB

Format

Adobe PDF

Checksum

(MD5):1de9be7f3f78b50a0b513dcd75cfd5b8