The effect of extrinsic capacitances on the microwave performance of Ga0.51In0.49P/GaAs MISFETs (0 nm ≦ t ≦10 nm) grown by GSMBE
Journal
International Semiconductor Conference, 1996
Pages
659-662
Date Issued
1996
Author(s)
Lin, Yo-Sheng
Abstract
The effect of extrinsic capacitances on the microwave performance of Ga/sub 0.51/In/sub 0.49/P/GaAs MISFETs was first studied experimentally and theoretically by varying the thickness of the Ga/sub 0.51/In/sub 0.49/P insulating layer. MISFETs with airbridge gate structure showed higher f/sub t/s, and f/sub max/s than those of MISFETs with traditional gate structure due to the lower extrinsic capacitances. Moreover, the maximum values of f/sub t/s, and f/sub max/s for a 1 /spl mu/m gate length device all happen when t is between 50 nm and 100 nm. These results demonstrate that Ga/sub 0.51/In/sub 0.49/P/GaAs airbridge gate MISFETs with insulator thickness between 50 nm and 100 nm were very suitable for microwave high power device applications.
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Type
journal article
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