Electrical characterisation of the insulating property of Ta2O5 in Al-Ta2O5-SiO2-Si capacitors by a low-frequency

Resource

Circuits, Devices and Systems, IEE Proceedings G

Journal

Circuits, Devices and Systems, IEE Proceedings G

Pages

-

Date Issued

1990-10

Date

1990-10

Author(s)

Hwu, J.-G.

Lin, S.-T.

DOI

0956-3768

URI

Type

journal article

File(s)

Name

00217100.pdf

Size

491.57 KB

Format

Adobe PDF

Checksum

(MD5):aca5c25ccf71e99cec63d6703f1de597