https://scholars.lib.ntu.edu.tw/handle/123456789/153577
標題: | Analytical drain current model for a-Si:H TFTs by simultaneously considering localised deep and tail states | 作者: | Chen, C.S. KuoJB |
關鍵字: | Semiconductor device models; Thin film transistors | 公開日期: | 八月-1993 | 起(迄)頁: | - | 來源出版物: | Electronics Letters | 摘要: | An analytical drain current model for a-Si: H TFTs obtained by considering deep and tail states simultaneously is presented. Using an effective temperature approach, the localised deep and tail states have been considered in the DC model such that no approximations are needed. As verified by the published data, this analytical DC model provides an accurate prediction on the drain current characteristics of an a- Si: H thin film transistor. © 1993, The Institution of Electrical Engineers. All rights reserved. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0027648853&doi=10.1049%2fel%3a19931044&partnerID=40&md5=b97d83b5d784c43747ed081fa20ada87 | ISSN: | N/A | 其他識別: | 0013-5194 | DOI: | 10.1049/el:19931044 |
顯示於: | 電機工程學系 |
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