https://scholars.lib.ntu.edu.tw/handle/123456789/153858
Title: | Gate Area and Dose Effects on the Characerization of Oxide Radiation Hardness and Hot-Electron Resistance of MOS Devices by Repeated Irradiation-Then-Anneal Treatments. | Authors: | 胡振國 Lin, J. J. Hwu, Jenn-Gwo |
Issue Date: | 1991 | URI: | http://ntur.lib.ntu.edu.tw//handle/246246/153908 |
Appears in Collections: | 電機工程學系 |
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