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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Improvement in Radiation Hardness of n-MOSFET's with Gate Oxides Prepared by Multiple N20 Annealings
Details
Improvement in Radiation Hardness of n-MOSFET's with Gate Oxides Prepared by Multiple N20 Annealings
Date Issued
1994
Date
1994
Author(s)
Hwu, Jenn-Gwo
URI
http://ntur.lib.ntu.edu.tw//handle/246246/153915
Type
report
