The Characteristics of Si-Doped GaAs Epilayers Grown by Metal Organic Chemical Vapor Deposition (MOCVD) Using Silane Source
Resource
Applied Physics Letters, v.51, p.1634-1636
Journal
Applied Physics Letters
Journal Volume
v.51
Pages
1634-1636
Date Issued
1988
Date
1988
Author(s)
Type
journal article