Orange–Red Light-Emitting Diodes Based on a Prestrained InGaN–GaN Quantum-Well Epitaxy Structure
Resource
IEEE Photonics Technology Letters 18 (21): 2269-2271
Journal
IEEE Photonics Technology Letters
Journal Volume
18
Journal Issue
21
Pages
2269-2271
Date Issued
2006
Date
2006
Author(s)
Type
journal article
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10.pdf
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94.86 KB
Format
Adobe PDF
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(MD5):508b090522ad5de651c1e970ab08b3ae