https://scholars.lib.ntu.edu.tw/handle/123456789/155574
標題: | Bias-dependent charge accumulation in pentacene-based thin-film transistors | 作者: | Lin, Chi-Feng Chuang, Kai-Hsiang Chen, Yet-Min JIUN-HAW LEE JIAN-JANG HUANG Wang, Yu-Wu |
關鍵字: | Carrier transport; Mobility; Organic thin-film transistor | 公開日期: | 2006 | 卷: | 6336 | 來源出版物: | Proceedings of SPIE - The International Society for Optical Engineering | 會議論文: | Organic Field-Effect Transistors V | 摘要: | In this paper, we have demonstrated the current increase with repeated measurements of Id-Vds curves with different Vg values which results from the non-uniform carrier accumulation in the channel region of a pentacene-based thin film transistor (TFT). The mobility of our device reaches 0.07 cm2/Vs even the substrate was not heated during pentacene deposition. Besides, the devices show good air-stable properties. The magnitude of Id decreased less than 30% after exposure in air for 2 weeks. By repeating the Id-Vds measurements from 0 to -50 V with the Vg values of 0, -10, -20, -30, -40, and -50 V for 10 minutes, we observed a four times current increase from -0.75 to -2.8 μA at Vg= -50V and Vds=50V. The current increase comes from the holes accumulation near the drain. When the source and drain were exchanged, the current decreases to the 0.08 μA, After another 10 minutes operation, the current will recover back to the original values. Such a process is reversible and shows the potential of the memory device base on this pentacene transistor. |
URI: | http://ntur.lib.ntu.edu.tw//handle/246246/145882 https://www.scopus.com/inward/record.uri?eid=2-s2.0-33751408552&doi=10.1117%2f12.678972&partnerID=40&md5=83540543058a469de28ef076da91ec22 |
ISSN: | 0277786X | DOI: | 10.1117/12.678972 |
顯示於: | 電機工程學系 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。