Broadly tunable semiconductor lasers using asymmetric dual quantum wells
Resource
Optics Communications 171 (4-6): 271-277
Journal
Optics Communications
Journal Volume
171
Journal Issue
171
Pages
271-277
Date Issued
1999
Date
1999
Author(s)
Abstract
Semiconductor laser with extremely broadband tunability is achieved by engineering gain spectra of the laser material. Using asymmetric dual quantum wells, the gain bandwidth is broadened to about three times wider than that of conventional semiconductor lasers. With such laser material, the single-wavelength operation of the laser is tunable with 90 nm of tuning range. For dual-wavelength operation, the wavelength separation could be tuned from a few nm to about 55 nm. The two oscillation wavelengths could be almost randomly selected within a spectral range of more than 30 nm. Actively mode-locked operation is also achieved with 10-15 ps pulse widths and a tuning range of 62 nm.
SDGs
Type
journal article
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