Characteristics of Laser Diodes Influenced by Electron-Dominant Nonuniform Carrier Distribution
Resource
Proceedings of SPIE 4283: 659-669
Journal
Proceedings of SPIE - The International Society for Optical Engineering
Journal Volume
4283
Pages
659-669
Date Issued
2001
Date
2001
Author(s)
Abstract
Electron-determined nonuniform carrier distribution inside multiple quantum wells (MQW) is experimentally discovered. Two groups of mirror-imaged nonidentical quantum well (QW) InGaAsP/InP lasers diodes are designed, fabricated, and measured. Measured characteristics of both groups show that electron, instead of hole, is the dominant carrier affecting carrier distribution. Carrier transport effects including carrier diffusion/drift and capture/emission processes inside MQW are described to explain the nonuniform carrier distribution. The reason for the electron dominated carrier distribution is because electron takes less time to be captured into QW two-dimensional (2D) states than hole does. The sequence of the nonidentical QWs is also shown to have significant influence on device characteristics.
Other Subjects
Carrier concentration; Charge transfer; Semiconducting indium compounds; Carrier distribution; Quantum well lasers
Type
journal article
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