https://scholars.lib.ntu.edu.tw/handle/123456789/155611
Title: | Electroluminescence at Si Bandgap Energy from Metal-Oxide-Semiconductor Tunneling Diodes | Authors: | CHING-FUH LIN MIIN-JANG CHEN Lee, Ming-Hung CHEE-WEE LIU |
Keywords: | Electroluminescence; MOS; Silicon | Issue Date: | 2001 | Journal Volume: | 4293 | Start page/Pages: | 147-154 | Source: | Proceedings of SPIE - The International Society for Optical Engineering | Conference: | Silicon-based and Hybrid Optoelectronics III | Abstract: | We report room-temperature electroluninescence at Si bandgap energy from Metal-Oxide-Semiconductor (MOS) tunneling diodes. The ultrathin gate oxide with thickness 1 ∼ 3 nm was grown by rapid thermal oxidation (RTO) to allow significant current to tunnel through. The measured EL efficiency of the MOS tunneling diodes increases with the injection current and could be in the order of 10-5, which exceeds the limitation imposed byindirect bandgap nature of Si. We also study the temperature dependence of the electroluminescence and photoluminescence. The electroluminescence is much less dependent on temperature than photoluminescence from Si. The applied external field that results in the accumulation of majority carriers at Si/SiO2 interface in the case of electroluminescence could be the reason for such difference. The involved physics such as optical phonon, interface roughness, localized carriers, and exciton radiative recombination are used to explain the electroluminescence from silicon MOS tunneling diodes. |
URI: | http://ntur.lib.ntu.edu.tw//handle/246246/145921 http://ntur.lib.ntu.edu.tw/bitstream/246246/145921/1/29.pdf https://scholars.lib.ntu.edu.tw/handle/123456789/502129 https://www.scopus.com/inward/record.uri?eid=2-s2.0-0034859034&doi=10.1117%2f12.426934&partnerID=40&md5=db0ddd23c7407b102fd5f3ea1f8d88b1 |
ISSN: | 0277786X | DOI: | 10.1117/12.426934 | SDG/Keyword: | Charge carriers; Electroluminescence; Energy gap; Excitons; Interfaces (materials); MOS devices; Phonons; Photoluminescence; Quantum efficiency; Semiconducting silicon; Surface roughness; Thermooxidation; Radiative recombination; Ultrathin gate oxides; Tunnel diodes |
Appears in Collections: | 電機工程學系 |
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