https://scholars.lib.ntu.edu.tw/handle/123456789/155612
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Wu, Bing-Ruey | en_US |
dc.contributor.author | Lin, Ching-Fuh | en_US |
dc.contributor.author | Laih, Lih-Wen | en_US |
dc.contributor.author | Shih, Tien-Tsorng | en_US |
dc.creator | Wu, Bing-Ruey;Lin, Ching-Fuh;Laih, Lih-Wen;Shih, Tien-Tsorng | - |
dc.date | 2001 | en |
dc.date.accessioned | 2009-03-18T05:31:01Z | - |
dc.date.accessioned | 2018-07-06T15:57:58Z | - |
dc.date.available | 2009-03-18T05:31:01Z | - |
dc.date.available | 2018-07-06T15:57:58Z | - |
dc.date.issued | 2001 | - |
dc.identifier.issn | 0277786X | - |
dc.identifier.uri | http://ntur.lib.ntu.edu.tw//handle/246246/145922 | - |
dc.identifier.uri | http://ntur.lib.ntu.edu.tw/bitstream/246246/145922/1/30.pdf | - |
dc.identifier.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0034875124&doi=10.1117%2f12.428027&partnerID=40&md5=93dfc1b964b67051a4eb5efac9f75f5b | - |
dc.description.abstract | Extremely broadband emission is obtained from superluminescent diodes (SLDs)/semiconductor laser amplifiers (SLAs) with nonidentical quantum wells made of InGaAsP/InP materials. Two opposite sequences of nonidentical multiple quantum wells (MQWs), consisting of three In0.67Ga0.33As0.72P0.28 quantum wells (QWs) and two In0.53Ga0.47As QWs, are designed, fabricated, and measured. Nonuniform carrier distribution inside MQWs is further verified experimentally. The sequence of those wells is shown to have a significant influence on the emission spectra, indicating that stacking nonidentical MQWs for bandwidth broadening is not intuitively straightforward. With the three In0.67Ga0.33As0.72P0.28 quantum wells near the n-cladding layer and two In0.53Ga0.47AS quantum wells near the p-cladding layer, all bounded by In0.86Ga0.14As0.3P0.7 barriers, the emission spectrum of the fabricated SLDs/SLAs could cover from less than 1.3 μm to over 1.55 μm. The spectral width is near 300 nm. | - |
dc.format | application/pdf | en |
dc.format.extent | 301333 bytes | - |
dc.format.mimetype | application/pdf | - |
dc.language | en | en |
dc.language.iso | en_US | - |
dc.relation | Proceedings of SPIE 4292: 172-181 | en |
dc.relation.ispartof | Proceedings of SPIE - The International Society for Optical Engineering | en_US |
dc.source | AH-Scopus to ORCID | - |
dc.subject | Broadband emission; Nonidentical multiple quantum wells; Nonuniform carrier distribution; Superluminescent diode | - |
dc.subject.other | Amplifiers (electronic); Bandwidth; Cladding (coating); Semiconducting indium compounds; Semiconductor diodes; Semiconductor lasers; Semiconductor quantum wells; Spectrum analysis; Bradband emission; Semiconductor laser amplifiers (SLA); Superluminescent diodes; Luminescent devices | - |
dc.title | Extremely broadband superluminescent diodes/semiconductor laser amplifiers using nonidentical InGaAsP quantum wells | en |
dc.type | journal article | en |
dc.identifier.doi | 10.1117/12.428027 | - |
dc.identifier.scopus | 2-s2.0-0034875124 | - |
item.fulltext | with fulltext | - |
item.grantfulltext | open | - |
dc.relation.pages | 172-181 | - |
dc.relation.journalvolume | 4292 | - |
dc.identifier.uri.fulltext | http://ntur.lib.ntu.edu.tw/bitstream/246246/145922/1/30.pdf | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.openairetype | journal article | - |
item.languageiso639-1 | en_US | - |
item.grantfulltext | open | - |
item.cerifentitytype | Publications | - |
item.fulltext | with fulltext | - |
crisitem.author.dept | Photonics and Optoelectronics | - |
crisitem.author.dept | Electrical Engineering | - |
crisitem.author.dept | Electronics Engineering | - |
crisitem.author.orcid | 0000-0003-3787-2163 | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
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