https://scholars.lib.ntu.edu.tw/handle/123456789/155613
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | MIIN-JANG CHEN | en |
dc.contributor.author | CHING-FUH LIN | en |
dc.contributor.author | Lee, M. H. | en |
dc.contributor.author | Chang, S. T. | en |
dc.contributor.author | CHEE-WEE LIU | en |
dc.creator | Chen, Miin-Jang; Lin, Ching-Fuh; Lee, M. H.; Chang, S. T.; Liu, C. W. | - |
dc.date | 2001 | en |
dc.date.accessioned | 2009-03-18T05:33:21Z | - |
dc.date.accessioned | 2018-07-06T15:57:58Z | - |
dc.date.available | 2009-03-18T05:33:21Z | - |
dc.date.available | 2018-07-06T15:57:58Z | - |
dc.date.issued | 2001 | - |
dc.identifier.issn | 00036951 | - |
dc.identifier.uri | http://ntur.lib.ntu.edu.tw//handle/246246/145923 | - |
dc.identifier.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0035475479&doi=10.1063%2f1.1405429&partnerID=40&md5=3bddbdb9e34a03bb85784b7f4f336542 | - |
dc.description.abstract | The temporal response of the electroluminescence at the Si band gap energy from a metal-oxide-silicon (MOS) tunneling diode is used to characterize the minority carrier lifetime near the Si/SiO2 interface. The temporal responses reveal that the Shockley-Read-Hall (SRH) recombination lifetimes are 18 and 25.8 μs for the rising and falling edges, respectively, and that the ratio for SRH, radiative, and Auger recombinations is 1:0.196:0.096 at injection current density of 39 A/cm2. The investigation shows that the electroluminescence of the MOS tunneling diode can be significantly increased by reducing the number of the nonradiative recombination centers. © 2001 American Institute of Physics. | - |
dc.format | application/pdf | en |
dc.format.extent | 50693 bytes | - |
dc.format.mimetype | application/pdf | - |
dc.language | en | en |
dc.language.iso | en_US | - |
dc.relation | Applied Physics Letters 79 (14): 2264-2266 | en |
dc.relation.ispartof | Applied Physics Letters | - |
dc.title | Carrier lifetime measurement on electroluminescent metal–oxide–silicon tunneling diodes | en |
dc.type | journal article | en |
dc.identifier.doi | 10.1063/1.1405429 | - |
dc.identifier.scopus | 2-s2.0-0035475479 | - |
dc.relation.pages | 2264-2266 | - |
dc.relation.journalvolume | 79 | - |
dc.relation.journalissue | 14 | - |
dc.identifier.uri.fulltext | http://ntur.lib.ntu.edu.tw/bitstream/246246/145923/1/31.pdf | - |
item.languageiso639-1 | en_US | - |
item.cerifentitytype | Publications | - |
item.grantfulltext | open | - |
item.fulltext | with fulltext | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.openairetype | journal article | - |
crisitem.author.dept | Materials Science and Engineering | - |
crisitem.author.dept | Photonics and Optoelectronics | - |
crisitem.author.dept | Electrical Engineering | - |
crisitem.author.dept | Electronics Engineering | - |
crisitem.author.dept | Electronics Engineering | - |
crisitem.author.dept | Photonics and Optoelectronics | - |
crisitem.author.dept | Electrical Engineering | - |
crisitem.author.dept | Center for Condensed Matter Sciences | - |
crisitem.author.dept | MediaTek-NTU Research Center | - |
crisitem.author.dept | Center for Artificial Intelligence and Advanced Robotics | - |
crisitem.author.orcid | 0000-0003-3787-2163 | - |
crisitem.author.orcid | 0000-0002-6439-8754 | - |
crisitem.author.parentorg | College of Engineering | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | Others: University-Level Research Centers | - |
crisitem.author.parentorg | Others: University-Level Research Centers | - |
crisitem.author.parentorg | Others: University-Level Research Centers | - |
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