https://scholars.lib.ntu.edu.tw/handle/123456789/155616
Title: | Visible and band edge electroluminescence from indium tin oxide/SiO2/Si metal–oxide–semiconductor structures | Authors: | MIIN-JANG CHEN CHING-FUH LIN Liu, W. T. Chang, S. T. CHEE-WEE LIU |
Issue Date: | 2001 | Journal Volume: | 89 | Journal Issue: | 1 | Start page/Pages: | 323-326 | Source: | Journal of Applied Physics | Abstract: | Characteristics of electroluminescence from indium tin oxide (ITO)/SiO 2/Si metal-oxide-semiconductor (MOS) structures fabricated on both p-type and n-type Si wafers were investigated. The ITO/SiO 2/Si MOS on p-type Si could have both the visible and band edge electroluminescence, while the ITO/SiO 2/Si MOS on n-type Si has only band edge emission. The reason for the difference is attributed to the impact ionization that only occurs for ITO/SiO 2/Si(p) MOS. The study indicates that the band edge emission and visible luminescence are competing processes. The electroluminescence from ITO/SiO 2/Si(n) is also discovered to be less than that from the Al/SiO 2/Si(n). The reason is possibly due to the damage of the oxide bonding and the SiO 2/Si interface during the ITO sputtering. © 2001 American Institute of Physics. |
URI: | http://ntur.lib.ntu.edu.tw//handle/246246/145926 https://www.scopus.com/inward/record.uri?eid=2-s2.0-0009406424&doi=10.1063%2f1.1331647&partnerID=40&md5=1e36e8a88ff30a551337e4878392e532 |
ISSN: | 00218979 | DOI: | 10.1063/1.1331647 |
Appears in Collections: | 電機工程學系 |
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