https://scholars.lib.ntu.edu.tw/handle/123456789/155618
Title: | Electroluminescence at silicon band gap energy from mechanically pressed indium-tin-oxide/Si contact | Authors: | CHING-FUH LIN MIIN-JANG CHEN Chang, Shu-Wei Chung, Peng-Fei Liang, Eih-Zhe Su, Ting-Wien CHEE-WEE LIU |
Issue Date: | 2001 | Journal Volume: | 78 | Journal Issue: | 13 | Start page/Pages: | 1808-1810 | Source: | Applied Physics Letters | Abstract: | Room temperature electroluminescence (EL) corresponding to Si band gap energy is observed from mechanically pressed indium-tin-oxide (ITO)/Si contact. The intensity of luminescence is pressure dependent and highly related to the current-voltage characteristics. Increasing pressure simultaneously reduces the rectification property and the luminescence. The physical reason for EL is attributed to the formation of an air gap between the ITO and the Si substrate. The role of the air gap is similar to the oxide layer in the metal-oxide-semiconductor structure. The influence of surface quality of the Si substrate on the luminescence spectrum is also studied, and found to be significant. © 2001 American Institute of Physics. |
URI: | http://ntur.lib.ntu.edu.tw//handle/246246/145928 http://ntur.lib.ntu.edu.tw/bitstream/246246/145928/1/36.pdf https://www.scopus.com/inward/record.uri?eid=2-s2.0-0035952837&doi=10.1063%2f1.1359138&partnerID=40&md5=10c37212a4cff285552ba342ff04da8d |
ISSN: | 00036951 | DOI: | 10.1063/1.1359138 |
Appears in Collections: | 電機工程學系 |
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