https://scholars.lib.ntu.edu.tw/handle/123456789/155640
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Lin, Ching-Fuh | en |
dc.contributor.author | Su, Yi-Shin | en |
dc.contributor.author | Wu, Chao-Hsin | en |
dc.contributor.author | Chang, Yu-Chia | en |
dc.creator | Lin, Ching-Fuh; Su, Yi-Shin; Wu, Chao-Hsin; Chang, Yu-Chia | - |
dc.date | 2004 | en |
dc.date.accessioned | 2009-03-18T06:28:52Z | - |
dc.date.accessioned | 2018-07-06T15:58:35Z | - |
dc.date.available | 2009-03-18T06:28:52Z | - |
dc.date.available | 2018-07-06T15:58:35Z | - |
dc.date.issued | 2004 | - |
dc.identifier.issn | 00214922 | - |
dc.identifier.uri | http://ntur.lib.ntu.edu.tw//handle/246246/145950 | - |
dc.identifier.uri | http://ntur.lib.ntu.edu.tw/bitstream/246246/145950/1/63.pdf | - |
dc.identifier.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-10844237368&doi=10.1143%2fJJAP.43.7032&partnerID=40&md5=fea5b339f7e9b4998380f570a78e55aa | - |
dc.description.abstract | The thickness of the separate confinement heterostructure (SCH) layer is found to have a significant influence on the carrier distribution among InGaAsP multiple quantum wells in laser diodes. When the SCH layer is 120nm thick, the carrier distribution of the fabricated laser diodes favors quantum wells near the n-cladding layer. When the thickness of the SCH layer is reduced to 20 nm, the carrier distribution of the fabricated laser diodes favors quantum wells near the p-cladding layer. Our experiments indicate that the carrier distribution of a fabricated laser diode can be engineered using an SCH layer of appropriate thickness. | - |
dc.format | application/pdf | en |
dc.format.extent | 144859 bytes | - |
dc.format.mimetype | application/pdf | - |
dc.language | en | en |
dc.language.iso | en_US | - |
dc.relation.ispartof | Japanese Journal of Applied Physics | en_US |
dc.subject | Carrier distribution; Laser diode; Multiple quantum wells; Nonidentical multiple quantum wells; Separate confinement heterosturcture | - |
dc.subject.other | Cladding (coating); Electric currents; Heterojunctions; Light absorption; Semiconducting indium compounds; Semiconductor lasers; Carrier distribution; Fabry-Perot laser diodes; Nonidentical multiple quantum wells; Separate confinement heterostructure; Semiconductor quantum wells | - |
dc.title | Influence of Separate Confinement Heterostructure Layer on Carrier Distribution in InGaAsP Laser Diodes with Nonidentical Multiple Quantum Wells | en |
dc.type | journal article | en |
dc.identifier.doi | 10.1143/JJAP.43.7032 | - |
dc.identifier.scopus | 2-s2.0-10844237368 | - |
item.fulltext | with fulltext | - |
item.grantfulltext | open | - |
dc.relation.pages | 7032-7035 | - |
dc.relation.journalvolume | 43 | - |
dc.relation.journalissue | 10 | - |
dc.identifier.uri.fulltext | http://ntur.lib.ntu.edu.tw/bitstream/246246/145950/1/63.pdf | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.openairetype | journal article | - |
item.languageiso639-1 | en_US | - |
item.grantfulltext | open | - |
item.cerifentitytype | Publications | - |
item.fulltext | with fulltext | - |
crisitem.author.dept | Photonics and Optoelectronics | - |
crisitem.author.dept | Electrical Engineering | - |
crisitem.author.dept | Electronics Engineering | - |
crisitem.author.dept | Electronics Engineering | - |
crisitem.author.dept | Photonics and Optoelectronics | - |
crisitem.author.dept | Electrical Engineering | - |
crisitem.author.dept | Program in Semiconductor Device, Material, and Hetero-integration | - |
crisitem.author.orcid | 0000-0003-3787-2163 | - |
crisitem.author.orcid | 0000-0001-7849-773X | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | Graduate School of Advanced Technology | - |
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