https://scholars.lib.ntu.edu.tw/handle/123456789/155688
標題: | Relation between the collector current and the two-dimensional electron gas stored in the base-collector heterojunction notch of InAlAs/InGaAs/InAlGaAs DHBTs | 作者: | Huang, Chao-Hsing Lee, Tsuen-Lin Lin, Hao-Hsiung |
公開日期: | 1995 | 卷: | 38 | 期: | 10 | 起(迄)頁: | 1765-1770 | 來源出版物: | Solid-State Electronics | 摘要: | From the Gummel plots of InAlAs/InGaAs/In0.52AlxGa0.48-xAs double heterojunction bipolar transistors (DHBTs), the relationship between the collector current and the density of the two-dimensional electron gas (2DEG) stored in the base-collector (B-C) heterojunction notch is found to be an exponential function which stems from the thermionic emission escaping process of the 2DEG. © 1995. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0343048033&doi=10.1016%2f0038-1101%2894%2900296-R&partnerID=40&md5=7ee704957843bf675fc3017f09cd1f84 | DOI: | 10.1016/0038-1101(94)00296-R |
顯示於: | 電機工程學系 |
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