https://scholars.lib.ntu.edu.tw/handle/123456789/155715
標題: | GaAs metal-semiconductor field effect transistor with InGaP/GaAs multiquantum barrier buffer layer | 作者: | Lee, Ching-Ting Shyu, Kuo-Chuan Lin, Iang-Jeng Lin, Hao-Hsiung |
公開日期: | 2000 | 期: | 74 | 起(迄)頁: | 147-150 | 來源出版物: | Materials Science and Engineering B | 摘要: | A novel metal-semiconductor field effect transistor (MESFET) with InGaP/GaAs multiple quantum barrier (MQB) buffer layer was studied. Since the effective potential barrier height is enhanced using the InGaP/GaAs MQB structure, good performances of electronic and optical isolations are achieved. A configuration with the MESFET and sidegate electrode was fabricated to demonstrate the function of the InGaP/GaAs MQB structure. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0033730097&doi=10.1016%2fS0921-5107%2899%2900551-6&partnerID=40&md5=1b4357b193ffc8ecaa2596bcb48ae702 | DOI: | 10.1016/S0921-5107(99)00551-6 | SDG/關鍵字: | Semiconducting gallium arsenide; Semiconducting indium compounds; Indium gallium phosphide; Multiple quantum barrier (MQB); MESFET devices |
顯示於: | 電機工程學系 |
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