Growth of InAsN/InGaAs(P) quantum wells on InP by gas source molecular beam epitaxy

Gas source molecular beam epitaxy (GSMBE) and rf plasma nitrogen source were used to grow InAsN/InGaAs(P) quantum wells on semiconductor InP substrates. The double X-ray diffraction spectra revealed the presence of a flatter heterointerface formed due to lattice mismatching. The existence of dislocations on arsenic sites was effected by the degradation of photoluminescence intensity due to the increase of the nitrogen composition in InAsN multiple quantum wells. Increasing nitrogen composition in the InAsN layer resulted in lowered peak energy. Effects of growth temperature on photoluminescence intensity were also discussed.