https://scholars.lib.ntu.edu.tw/handle/123456789/155739
標題: | 1.3 μm GaAs/GaAsSb quantum well laser grown by solid source molecular beam epitaxy | 作者: | Liu, P.-W. Liao, G.-H. HAO-HSIUNG LIN |
公開日期: | 2004 | 卷: | 40 | 期: | 3 | 起(迄)頁: | 177-179 | 來源出版物: | Electronics Letters | 摘要: | A highly strained GaAs/GaAs0.64Sb0.36 single quantum well laser has been grown on GaAs (100) substrate by using solid source molecular beam epitaxy. The uncoated broad-area laser demonstrates 1.292 μm pulsed operation with a low threshold current density of 300 A/cm2. The spontaneous emission of the laser was also studied. The result reveals that the Auger recombination component dominates the threshold current at high temperature. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-1242298648&doi=10.1049%2fel%3a20040119&partnerID=40&md5=583f380d8acd0c9dbca0adf2de877cb3 | DOI: | 10.1049/el:20040119 | SDG/關鍵字: | Antimony; Current density; Etching; High temperature effects; Laser beam effects; Molecular beam epitaxy; Optical communication; Optical waveguides; Semiconducting gallium arsenide; Semiconductor growth; Spontaneous emission; Wetting; Bandgap energy; Wet-etching; Quantum well lasers |
顯示於: | 電機工程學系 |
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