https://scholars.lib.ntu.edu.tw/handle/123456789/155831
標題: | Enhancing nanocrystallite si electroluminescence by suppressing oxygen decomposition in high-temperature and low-plasma-power PECVD | 作者: | Lin, Chun-Jung GONG-RU LIN |
公開日期: | 2007 | 卷: | 154 | 期: | 8 | 起(迄)頁: | - | 來源出版物: | Journal of The Electrochemical Society | 摘要: | This work demonstrates enhanced electroluminescence and quantum efficiency of a metal- Si Ox -Si light-emitting diode (MOSLED) fabricated on nanocrystallite Si (nc-Si)-embedded Si Ox plasma-enhanced chemical vapor deposition (PECVD) grown at high substrate temperature and threshold plasma power. Electron energy loss spectroscopy indicates that the energy loss of the primary electron transmitted throughout Si-rich Si Ox is reduced from 110 to 106 eV due to the formation of nc-Si. At low plasma power condition, the required dissociation energy of a N2 O molecule exceeds that of a Si H4 molecule, while increasing the deposition temperature during PECVD growth facilitates the out-diffusion of adsorbed oxygen atoms. Such enhanced deposition of Si-rich Si Ox with excess Si atoms and dense nc-Si after annealing is observed. As the deposition temperature for the Si-rich Si Ox increases from 300 to 400°C, the electroluminescent power and quantum efficiency of the nc-Si-based MOSLED are both improved by more than 1 order of magnitude. The output power, turn-on voltage, and internal and external quantum efficiency of the indium tin oxide/ Si Ox: nc-Sip-SiAl diode that was prepared at a substrate temperature of 400°C are 47 nW at 54 μA, 54.5 V, 5× 10-4, and 1.6× 10-5, respectively. © 2007 The Electrochemical Society. |
URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-34347361678&partnerID=MN8TOARS http://ntur.lib.ntu.edu.tw//handle/246246/148024 http://ntur.lib.ntu.edu.tw/bitstream/246246/148024/1/12.pdf |
DOI: | 10.1149/1.2747535 | SDG/關鍵字: | Decomposition; Electroluminescence; Electron energy loss spectroscopy; High temperature effects; Oxygen; Plasma enhanced chemical vapor deposition; Silicon; Dissociation energy; Oxygen decomposition; Threshold plasma power; Nanocrystallites |
顯示於: | 電機工程學系 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。