https://scholars.lib.ntu.edu.tw/handle/123456789/155865
標題: | Effect of a deprotection group on acrylic photoresist | 作者: | Fu, S. C. Hsieh, K. H. LON A. WANG |
公開日期: | 1999 | 卷: | 6 | 期: | 2 | 起(迄)頁: | 99-105 | 來源出版物: | Journal of Polymer Research | 摘要: | This study is synthesized and investigated polyacrylate single layer resist (SLR) using t-amyl alcohol as a deprotection group. The t-amyl group of the copolymer resist and dissolution inhibitor (DI) in this chemically amplified photoresist (CAMP) was deprotected by a light stimulated photoacid generator (PAG) upon post exposure bake (PEB). The polarity change of the system from a hydrophobic to a hydrophilic property made the exposed region soluble in the base developer. KrF and ArF excimer lasers were used to test resists using two components (PR and PAG) and three components (PR, DI and PAG) in the resists. This study also investigated the different effects of exposure dose, developer concentration, and content between t-amyl and t-butyl methacrylate on lithographic performance of resists. |
URI: | http://ntur.lib.ntu.edu.tw//handle/246246/148146 https://www.scopus.com/inward/record.uri?eid=2-s2.0-0033108468&doi=10.1007%2fs10965-006-0076-1&partnerID=40&md5=688293adce2914bc355bdca2c49f81ca |
ISSN: | 10229760 | DOI: | 10.1007/s10965-006-0076-1 | SDG/關鍵字: | Alcohols; Copolymers; Excimer lasers; Hydrophobicity; Photoresists; Polarization; Polyacrylates; Chemically amplified photoresists (CAMP); Dissolution inhibitors (DI); Photoacid generators (PAG); Post exposure bake (PEB); Single layer resists (SLR); Plastic coatings |
顯示於: | 電機工程學系 |
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