A High Efficient 820 nm MOS Ge Quantum Dot Photodetector

Resource

IEEE Electron Device Letters 24 (5): 318-320

Journal

IEEE Electron Device Letters

Journal Volume

24

Journal Issue

5

Pages

318-320

Date Issued

2003

Date

2003

Author(s)

Hsu, B.-C.

Chang, S.T.

Chen, T.-C.

Kuo, P.-S.

Chen, P.S.

Pei, Z.

Liu, C.W.

URI

Type

journal article

File(s)

Name

35.pdf

Size

100.54 KB

Format

Adobe PDF

Checksum

(MD5):e5db3937c8fdd684417c9392f348395a