https://scholars.lib.ntu.edu.tw/handle/123456789/155908
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Hsu, B.-C. | en |
dc.contributor.author | Chang, S.T. | en |
dc.contributor.author | Chen, T.-C. | en |
dc.contributor.author | Kuo, P.-S. | en |
dc.contributor.author | Chen, P.S. | en |
dc.contributor.author | Pei, Z. | en |
dc.contributor.author | Liu, C.W. | en |
dc.creator | Hsu, B.-C.; Chang, S.T.; Chen, T.-C.; Kuo, P.-S.; Chen, P.S.; Pei, Z.; Liu, C.W. | en |
dc.date | 2003 | en |
dc.date.accessioned | 2009-03-25T08:34:53Z | - |
dc.date.accessioned | 2018-07-06T16:48:02Z | - |
dc.date.available | 2009-03-25T08:34:53Z | - |
dc.date.available | 2018-07-06T16:48:02Z | - |
dc.date.issued | 2003 | - |
dc.identifier.uri | http://ntur.lib.ntu.edu.tw//handle/246246/148190 | - |
dc.format | application/pdf | en |
dc.format.extent | 102958 bytes | - |
dc.format.mimetype | application/pdf | - |
dc.language | en | en |
dc.language.iso | en_US | - |
dc.relation | IEEE Electron Device Letters 24 (5): 318-320 | en |
dc.relation.ispartof | IEEE Electron Device Letters | - |
dc.title | A High Efficient 820 nm MOS Ge Quantum Dot Photodetector | en |
dc.type | journal article | en |
dc.relation.pages | 318-320 | - |
dc.relation.journalvolume | 24 | - |
dc.relation.journalissue | 5 | - |
dc.identifier.uri.fulltext | http://ntur.lib.ntu.edu.tw/bitstream/246246/148190/1/35.pdf | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.openairetype | journal article | - |
item.languageiso639-1 | en_US | - |
item.grantfulltext | open | - |
item.cerifentitytype | Publications | - |
item.fulltext | with fulltext | - |
顯示於: | 電機工程學系 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。