Electron-Determined Nonuniform Carrier Distribution among InGaAsP Multiple Quantum Wells
Journal
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Journal Volume
42
Journal Issue
9 A
Pages
5557-5558
Date Issued
2003/4/14
Date
2003/4/14
Author(s)
DOI
246246/200611150121963
Abstract
Experiments on laser diodes and superluminescent diodes with nonidentical InGaAsP multiple quantum wells (MQWs) show
that quantum wells near the n-cladding layer could accumulate more carriers than those near the p-cladding layer, indicating
that nonuniform carrier distribution is determined by electrons instead of holes. The electron-determined behavior is attributed
to the thick separate-confinement heterostructure layer. This contrary observation to hole-determined nonuniform carrier
distribution implies that carrier distribution among the MQWs could be engineered for desired purposes.
Subjects
laser diodes
superluminescent diodes
multiple quantum wells
nonuniform carrier distribution
separate-confinement
heterostructure layer
heterostructure layer
Publisher
Taipei:National Taiwan University Dept Mech Engn
Type
journal article
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