https://scholars.lib.ntu.edu.tw/handle/123456789/173659| Title: | Electron-Determined Nonuniform Carrier Distribution among InGaAsP Multiple Quantum Wells | Authors: | Lin, Ching-Fuh Wu, Bing-Ruey Laih, Lih-Wen Lin, Ching-Fuh Wu, Bing-Ruey Laih, Lih-Wen Lin, Ching-Fuh |
Keywords: | laser diodes;superluminescent diodes;multiple quantum wells;nonuniform carrier distribution;separate-confinement heterostructure layer | Issue Date: | 2003 | Publisher: | Taipei:National Taiwan University Dept Mech Engn | Journal Volume: | 42 | Journal Issue: | 9 A | Start page/Pages: | 5557-5558 | Source: | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | Abstract: | Experiments on laser diodes and superluminescent diodes with nonidentical InGaAsP multiple quantum wells (MQWs) show that quantum wells near the n-cladding layer could accumulate more carriers than those near the p-cladding layer, indicating that nonuniform carrier distribution is determined by electrons instead of holes. The electron-determined behavior is attributed to the thick separate-confinement heterostructure layer. This contrary observation to hole-determined nonuniform carrier distribution implies that carrier distribution among the MQWs could be engineered for desired purposes. |
URI: | http://ntur.lib.ntu.edu.tw//handle/246246/200611150121963 http://ntur.lib.ntu.edu.tw/bitstream/246246/200611150121963/1/6378.pdf |
Other Identifiers: | 246246/200611150121963 |
| Appears in Collections: | 電子工程學研究所 |
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