前瞻矽鍺/高介電質/金屬閘極元件及模組技術 – 子計 畫四：矽鍺/高介電質/金屬閘極光電元件與模組技術(I)
Date Issued
2005-10-31
Date
2005-10-31
Author(s)
DOI
932215E002017
Abstract
The optoelectronics industry is a star industry
with potential. The value of output in
optoelectronics devices is about 6 percentage
(10 B US dollar) of total semiconductor
industry, and it will be increased with time.
For example, the value of output in
optoelectronics industry in Taiwan is 3000
hundred million, which is almost contributed
by display and storage. The optical
communication, emitting, optical detection
device have few contribution to the value of
output in optoelectronics industry. In the past,
the COMS image sensor (for digital camera),
liquid crystal on Si (for display), and the array
waveguide grating (for optical communication)
are all Si base device. So that it is the purpose
for researching COMS optoelectronics to
enhance the function of Si (called “silicon+”)
if the optoelectronics device can be made of
COMS technology. The combination of
advance SiGe, high k, and metal gate for
novel quantum optoelectronics device and
high frequency optical communication is
purpose in this research.
Publisher
臺北市：國立臺灣大學電子工程學研究所
Type
report
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