前瞻矽鍺/高介電質/金屬閘極元件及模組技術 –總 計劃(I)
Date Issued
2005-07-31
Date
2005-07-31
Author(s)
DOI
932215E002018
Abstract
The main project covers three module
technologies, including high K, SiGe and
metal gate (subproject 3 & 4), and four
device technologies including simulation and
modeling of nano-scaled electronic and
optoelectronic devices ( subproject1), MOS
electronic device (subproject 3), and CMOS
optoelectronics (subproject 4). Based on the
concept that “It will be CMOS, if CMOS can
do,” we try to extend the CMOS kingdom to
new applications using CMOS-based new
technologies. In this main project, SiGe, high
k, and metal gate technologies have been
investigated and integrated in the modulus
technology.
The abstracts of subprojects are scheduled as
following.
Subproject 1:
A commercial Monte Carlo simulator
ISE-SPARTATM was used to simulate the
strain-induced performance enhancement in
N- and P-type strained Si MOSFETs with
Leff scaling down to 10nm. When the
effective gate length of N- and P-type
MOSFETs with Ge content of 40% in SiGe
substrate are close to 10nm, the on-current
still has 25% and 17% enhancement,
respectively.
Strained Si surrounding the SiGe
embedded body on a SOI (silicon on
insulator) substrate forms a novel Tri-gate
FET. This novel device with the enhanced
carrier mobility and heterojunction
confinement is demonstrated with greatly
improved performance for NMOS by 3-D
simulation. The PMOS is not improved as
much as NMOS due to the buried channel at
the Si/SiGe abrupt heterojunction. Using
grade-back layer among strained Si and
relaxed SiGe body can significantly improve
the performance of PMOS. The MOS Ge/Si
QDIPs for 2~10μm are successfully
demonstrated. Since the Ge wetting layer
could be seem as simply quantum well
structure, the valance band bound state
energy is calculated by k‧p method. By
calculating the total intersubband transitions,
a absorption peak is located at 7.5μm. From
PL spectrum and the theoretical calculation
results, the quantum dot structure is
responsible for 2~3μm response with high
operation temperature and the wetting layer
structure (quantum well) is responsible for
3~10μm response.
Subproject 3:
A high-quality ultra thin HfO2/Hf silicate
film is deposited on tensile-strained-SiC
alloy layers using the HfO2/Hf gate stack
technique. The electrical characteristics of
Pt/Hf-silicate/SiC/p-Si/Al structures are
similar to those of Pt/Hf-silicate/p-Si/Al
structures. The significant improvements in
the electrical characteristics such as leakage
current, effective dielectric constant,
interface state density and fixed oxide charge
density are observed for HfO2/Hf gate stacks
as compared with HfO2 films on SiC alloy
layers. Using this gate stack technique, a
high dielectric constant (~15.5) for HfO2/Hf
silicate can be obtained, and this technique
can be applied to fabricate ultra short SiC
surface channel metal oxide semiconductor
field effect transistor (MOSFET) devices.
Subproject 4:
The optoelectronics industry is a star
industry with potential. The value of output
in optoelectronics devices is about 6
percentages (10 B US dollar) of total semiconductor industry, and it will be
increased with time. For example, the value
of output in optoelectronics industry in
Taiwan is 3000 hundred million, which is
almost contributed by display and storage.
The optical communication, emitting, optical
detection device have few contribution to the
value of output in optoelectronics industry.
In the past, the COMS image sensor (for
digital camera), liquid crystal on Si (for
display), and the array waveguide grating
(for optical communication) are all Si base
device. So that it is the purpose for
researching COMS optoelectronics to
enhance the function of Si (called “silicon+”)
if the optoelectronics device can be made of
COMS technology. The combination of
advance SiGe, high k, and metal gate for
novel quantum optoelectronics device and
high frequency optical communication is
purpose in this research.
Subjects
SiGe
strain
mobility
Quantum
Dot
Dot
SiC
high K
metal gate
Publisher
臺北市：國立臺灣大學電子工程學研究所
Type
report
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