https://scholars.lib.ntu.edu.tw/handle/123456789/174455
DC 欄位 | 值 | 語言 |
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dc.contributor | 楊志忠 | en |
dc.contributor | 臺灣大學:電子工程學研究所 | zh_TW |
dc.contributor.author | 陳俊陽 | zh |
dc.contributor.author | Chen, Chun-Yang | en |
dc.creator | 陳俊陽 | zh |
dc.creator | Chen, Chun-Yang | en |
dc.date | 2004 | en |
dc.date.accessioned | 2007-11-27T07:21:28Z | - |
dc.date.accessioned | 2018-07-10T01:37:12Z | - |
dc.date.available | 2007-11-27T07:21:28Z | - |
dc.date.available | 2018-07-10T01:37:12Z | - |
dc.date.issued | 2004 | - |
dc.identifier | en-US | en |
dc.identifier.uri | http://ntur.lib.ntu.edu.tw//handle/246246/57691 | - |
dc.description.abstract | 在本研究中,我們探討了五片氮化銦鎵/氮化鎵多重量子井不同量子井寬度結構的相關結果。首先,我們針對此五個銦含量相同但量子井寬度不同的氮化銦鎵/氮化鎵多重量子井結構的樣品做了系統性的材料分析。從高解析度穿透式電子顯微鏡影像及應變分析中,我們發現隨著量子井寬度改變時,會形成不同形狀類似量子點的銦原子聚集結構,並且其界面也有不同程度的變動,而光學特性也與材料分析的結果相符合。之後,我們比較不同降溫速率的成長後熱退火處理對於氮化銦鎵/氮化鎵多重量子井結構之影響。利用改變降溫速率,我們研究奈米結構與光學特性的改變。當試片熱退火處理是以慢速的方式降溫時,可以看到相當清楚的銦聚集,並且其界面及量子井形狀都相當規則。另一方面,當試片熱退火處理是以快速的方式降溫時,也可以看到相當清楚的銦聚集,但是其界面會變得不清楚,並且會變成彎曲狀。所以熱退火處理中的降溫速率,會影響到試片的結構及光學特性。 | zh_TW |
dc.description.abstract | In this thesis, the study results of InGaN/GaN multiple quantum well structures are reported. First, we present systematical results of material analysis of five InGaN/GaN quantum well samples of the same indium content but different quantum well widths. High-resolution transmission electron microscopy (HRTEM) and strain-state analysis (SSA) images are obtained to show that different shapes of quantum-dot like clusters are formed when well width changes. Also, different degrees of the interface fluctuation are observed. The results of optical characterizations are quite consistent with material analyses. Then, we compare the post-growth thermal annealing effects on InGaN/GaN multiple quantum well structures of different annealing cooling rates. By changing the cooling rate, we investigate the changes of nano-structure. Samples of thermal annealing with the slow cooling rate have quite clear indium-rich clusters. The interfaces between the wells and barriers are quite clear and the well shapes are quite good. On the other hand, samples of thermal annealing with the fast cooling rate also have indium-rich clusters. However, their interfaces between the wells and barriers become unclear and are bended in shape. The cooling rate of the thermal annealing process can influence the sample structures and optical properties. | en |
dc.description.tableofcontents | Chapter 1 Introduction 1.1 Applications of Nitride-Based Materials....................................1 1.2 Group-III Nitride Materials Growth Issues 1.2.1 Lattice Structure of the Nitride Semiconductors………2 1.2.2 Epitaxy on Sapphire Substrates………………………..3 1.2.3 Growth of InGaN and InGaN/GaN Heterostructures….4 1.3 Review on the Characteristics of InGaN/GaN Structures 1.3.1 Defects in GaN-based Materials………………………5 1.3.2 Strain Effect………………………………………..…..6 1.3.3 Piezoelectric Field……………………………………..7 1.3.4 Spinodal Decomposition and Phase Separation…….....8 1.3.5 Indium Aggregation and Quantum Dot-like Structure.11 1.4 Post-growth Thermal Annealing……………………………...12 1.5 Dependence of Optical Property on Quantum Well Width in InGaN/GaN Quantum Well Structures…………….………..14 1.6 Research Topics…………………………………….……...…15 Chapter 2 Analysis Methods 2.1 Specimen Preparation of Cross-section TEM………………..31 2.2 Material Analysis 2.2.1 Transmission Electron Microscopy (TEM)…………..34 2.2.2 Strain-State Analysis (SSA)….……………...……….36 2.3 Optical Analysis 2.3.1 Photoluminescence (PL)………………………….......39 2.3.2 Photoluminescence Excitation (PLE)………………...40 Chapter 3 Characterization of As-Grown Samples 3.1 Sample Structure…………...………………………………...46 3.2 High-resolution Transmission Electron Microscopy (HRTEM) Results…………………….…………………………………..47 3.3 Strain-State Analysis (SSA) Results……………………...….48 3.4 PL Measurements Results……………………………………51 3.5 Summary…………………………...………………………...52 Chapter 4 Effects of Thermal Annealing With Different Cooling Rates 4.1 Sample Descriptions…………………………………………71 4.2 Strain-State Analysis (SSA) Results of the w25 series samples…………………………………..……..……………..72 4.3 Strain-State Analysis (SSA) Results of the w35 series samples………………………………………………………..73 4.4 Nanostructure Alteration upon Electron Beam Exposure...….74 4.5 PL Results………………………….…………………………75 4.6 PLE Results………………………………………………......76 4.7 Summary……………………………………………………..77 Chapter 5 Conclusions…………...……………………….105 References………………………………………………………….107 | en |
dc.format.extent | 7671060 bytes | - |
dc.format.mimetype | application/pdf | - |
dc.language | en-US | en |
dc.language.iso | en_US | - |
dc.subject | 氮化銦鎵 | en |
dc.subject | 奈米結構 | en |
dc.subject | 熱退火 | en |
dc.subject | Nano-structures | en |
dc.subject | InGaN | en |
dc.subject | Thermal Annealing | en |
dc.title | 以穿透式電子顯微術研究不同量子井厚度之氮化 銦鎵/氮化鎵多重量子井奈米結構及其熱退火之效果 | zh |
dc.title | Transmission Electron Microscopy Studies of InGaN/GaN Multiple Quantum Well Nano-structures of Different Well Widths and Different Thermal Annealing Conditions | en |
dc.type | thesis | en |
dc.identifier.uri.fulltext | http://ntur.lib.ntu.edu.tw/bitstream/246246/57691/1/ntu-93-R91943111-1.pdf | - |
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item.languageiso639-1 | en_US | - |
item.fulltext | with fulltext | - |
item.grantfulltext | open | - |
item.openairetype | thesis | - |
item.openairecristype | http://purl.org/coar/resource_type/c_46ec | - |
item.cerifentitytype | Publications | - |
顯示於: | 電子工程學研究所 |
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