DETERMINATION OF THE CONCENTRATIONS OF TRACE AND DOPING ELEMENTS IN GAAS BY NEUTRON-ACTIVATION ANALYSIS
Journal
Journal of Radioanalytical and Nuclear Chemistry-Articles
Journal Volume
141
Journal Issue
2
Pages
317-326
Date Issued
1990
Author(s)
Abstract
The concentrations of ten trace and dopant elements in GaAs semiconductor were determined by reactor neutron activation analysis after removal of As by evaporation of AsCl3. The retentions of the elements of interest were measured using radiotracers. The concentrations of doping elements (Te, Cr and Zn) in commercial GaAs samples were compared to the limit of detection of these elements to analyze the possibility to use NAA for concentration depth profiling measurements. The NAA results were compared with those of electrical measurements and SIMS and the discrepancies found are discussed. © 1990 Akadémiai Kiadó.
SDGs
Type
journal article