Enhancement in soft breakdown occurrence of ultra-thin gate oxides caused by photon effect in rapid thermal post-oxidation annealing
Journal
Solid-State Electronics
Journal Volume
44
Journal Issue
8
Pages
1405-1410
Date Issued
2000
Author(s)
Abstract
Soft breakdown properties affected by photon energy during rapid thermal post-oxidation annealing (POA) of ultra-thin gate oxide are investigated. Generally, breakdown can be classified into normal hard breakdown (HBD) and soft breakdown (SBD). It was found that the occurrence of HBD and SBD depends on the process and stress field. Samples with front and back sides illuminated by a tungsten-halogen lamp during rapid thermal POA were examined. We find that front side illuminated oxides show easier SBD than back side ones. These results indicate that the photon energy may not only enhance the strength of Si-O bonds to suppress the lateral propagation of breakdown spots, but also to localize defects to form a conductive path of the leakage current. The understanding of the photon effect in rapid thermal POA is useful for controlling the electrical properties of ultra-thin gate oxides.
Other Subjects
Chemical bonds; Electric breakdown of solids; Leakage currents; Oxidation; Photons; Rapid thermal annealing; Ultrathin films; Hard breakdown (HBD); Rapid thermal post oxidation annealing (POA); Soft breakdown (SBD); Semiconducting films
Type
journal article