https://scholars.lib.ntu.edu.tw/handle/123456789/288949
Title: | Resistance-dependent field effect on the radiation behavior of MOS capacitors examined by instantaneous-terminal-voltage technique | Authors: | JENN-GWO HWU | Issue Date: | 1990 | Journal Volume: | 51 | Journal Issue: | 1 | Start page/Pages: | 41-48 | Source: | Journal of Physics and Chemistry of Solids | URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-0025544507&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/288949 |
DOI: | 10.1016/0022-3697(90)90130-8 |
Appears in Collections: | 電機工程學系 |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.