https://scholars.lib.ntu.edu.tw/handle/123456789/288949| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | JENN-GWO HWU | en |
| dc.creator | Hwu, J.-G. and Fu, S.-L. | - |
| dc.date.accessioned | 2018-09-10T03:26:48Z | - |
| dc.date.available | 2018-09-10T03:26:48Z | - |
| dc.date.issued | 1990 | - |
| dc.identifier.uri | http://www.scopus.com/inward/record.url?eid=2-s2.0-0025544507&partnerID=MN8TOARS | - |
| dc.identifier.uri | http://scholars.lib.ntu.edu.tw/handle/123456789/288949 | - |
| dc.language | en | en |
| dc.relation.ispartof | Journal of Physics and Chemistry of Solids | - |
| dc.source | AH | - |
| dc.title | Resistance-dependent field effect on the radiation behavior of MOS capacitors examined by instantaneous-terminal-voltage technique | - |
| dc.type | journal article | en |
| dc.identifier.doi | 10.1016/0022-3697(90)90130-8 | - |
| dc.relation.pages | 41-48 | - |
| dc.relation.journalvolume | 51 | - |
| dc.relation.journalissue | 1 | - |
| item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
| item.cerifentitytype | Publications | - |
| item.fulltext | no fulltext | - |
| item.grantfulltext | none | - |
| item.openairetype | journal article | - |
| crisitem.author.dept | Electrical Engineering | - |
| crisitem.author.dept | Electronics Engineering | - |
| crisitem.author.orcid | 0000-0001-9688-0812 | - |
| crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
| crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
| Appears in Collections: | 電機工程學系 | |
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