https://scholars.lib.ntu.edu.tw/handle/123456789/289573
Title: | Papers from the 18th North American Conference on Molecular Beam Epitaxy-Nitrides by MBE-Properties of Ga2O3 (Gd2O3)/GaN metal-insulator-semiconductor diodes | Authors: | Hong, M Anselm, KA Kwo, J Ng, HM Baillargeon, JN Kortan, AR Mannaerts, JP Cho, AY Lee, CM Chyi, JI others MINGHWEI HONG |
Issue Date: | 2000 | Journal Volume: | 18 | Journal Issue: | 3 | Start page/Pages: | 1453-1456 | Source: | Journal of Vacuum Science and Technology-Section B-Microelectronics Nanometer Structur | URI: | http://scholars.lib.ntu.edu.tw/handle/123456789/289573 |
Appears in Collections: | 應用物理研究所 |
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