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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
GROWTH AND PROPERTIES OF GaP/Si DEVICE BY MOCVD.
Details
GROWTH AND PROPERTIES OF GaP/Si DEVICE BY MOCVD.
Journal
Proceedings of the Electrochemical Society
Journal Volume
81-7
Pages
387-392
Date Issued
1981
Author(s)
Su, Y.K.
Chang, C.Y.
Wu, T.S.
Lee, M.K.
Houng, M.P.
Chen, L.G.
LIANG-GEE CHEN
URI
http://www.scopus.com/inward/record.url?eid=2-s2.0-0019662098&partnerID=MN8TOARS
http://scholars.lib.ntu.edu.tw/handle/123456789/292112
Type
conference paper