Skip to main content
English
中文
Log In
Log in
Log in with ORCID
NTU Single Sign On
Have you forgotten your password?
Home
College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Characterization of FaAs epitaxial layers by low pressure MOVPE using TEG as Ga source
Details
Characterization of FaAs epitaxial layers by low pressure MOVPE using TEG as Ga source
Journal
Journal of Crystal Growth
Journal Volume
55
Journal Issue
1
Pages
24-29
Date Issued
1981
Author(s)
Chang, C.Y.
Su, Y.K.
Lee, M.K.
Chen, L.G.
Houng, M.P.
LIANG-GEE CHEN
DOI
10.1016/0022-0248(81)90266-9
URI
http://www.scopus.com/inward/record.url?eid=2-s2.0-49049152584&partnerID=MN8TOARS
http://scholars.lib.ntu.edu.tw/handle/123456789/292113
Type
journal article