Characterization of FaAs epitaxial layers by low pressure MOVPE using TEG as Ga source
Journal
Journal of Crystal Growth
Journal Volume
55
Journal Issue
1
Pages
24-29
Date Issued
1981
Author(s)
Abstract
A new method for growing GaAs thin films is studied. High quality GaAs layers can be grown by low pressure metalorganic vapor phase epitaxy (MOVPE) by using triethylgallium (TEG) as Ga source. The best electron concentration of an as-grown GaAs epilayer, with Hall mobility more than 7000 cm2/V · s, is lower than 1013 cm-3 at room temperature. Mirror-like surfaces are readily achieved. SEM and optical microscopy are utilized to observe the surface morphology of epilayer. Growth kinetics is discussed. The measurement of the etch pit density is also used to find the effects of growth parameters such as: growth temperature, mole ratio of As and Ga, etc. The optimum growth conditions are concluded as follows: growth temperature T=660°C, mole ratio As/Ga=13, total flux=1250 cm3/min and pressure of reactor=20 Torr. © 1981.
SDGs
Type
journal article