Breakdown characteristics of ultrathin gate oxides (<4 nm) in metal-oxide-semiconductor structure subjected to substrate injection
Journal
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Journal Volume
19
Journal Issue
5
Pages
1894-1897
Date Issued
2001
Author(s)
Huang, C.-H.
Abstract
The investigation of breakdown characteristics of ultrathin gate oxides was done in metal-oxide-semiconductor structure subjected to substrate injection by means of ramp-up and ramp-down current-voltage (I-V) measurements. There were three different modes of breakdown for substrate injection existing in I-V characteristics namely resistorlike, hysteresislike, and saturation. A study of related characteristics of the three modes was done and they exhibited oxide thickness dependence.
Other Subjects
Charge carriers; Current voltage characteristics; Electric breakdown; Electric conductivity; Substrates; Ultrathin gate oxides; ULSI circuits
Type
journal article