https://scholars.lib.ntu.edu.tw/handle/123456789/292417| Title: | Breakdown characteristics of ultrathin gate oxides (<4 nm) in metal-oxide-semiconductor structure subjected to substrate injection | Authors: | Huang, C.-H. Hwu, J.-G. JENN-GWO HWU |
Issue Date: | 2001 | Journal Volume: | 19 | Journal Issue: | 5 | Start page/Pages: | 1894-1897 | Source: | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-0035439922&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/292417 |
DOI: | 10.1116/1.1403441 |
| Appears in Collections: | 電機工程學系 |
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