https://scholars.lib.ntu.edu.tw/handle/123456789/292417
標題: | Breakdown characteristics of ultrathin gate oxides (<4 nm) in metal-oxide-semiconductor structure subjected to substrate injection | 作者: | Huang, C.-H. JENN-GWO HWU |
公開日期: | 2001 | 卷: | 19 | 期: | 5 | 起(迄)頁: | 1894-1897 | 來源出版物: | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | 摘要: | The investigation of breakdown characteristics of ultrathin gate oxides was done in metal-oxide-semiconductor structure subjected to substrate injection by means of ramp-up and ramp-down current-voltage (I-V) measurements. There were three different modes of breakdown for substrate injection existing in I-V characteristics namely resistorlike, hysteresislike, and saturation. A study of related characteristics of the three modes was done and they exhibited oxide thickness dependence. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0035439922&doi=10.1116%2f1.1403441&partnerID=40&md5=6bf1b5c0f7a94edbbc109d80b2d0cd7e http://scholars.lib.ntu.edu.tw/handle/123456789/292417 |
DOI: | 10.1116/1.1403441 | SDG/關鍵字: | Charge carriers; Current voltage characteristics; Electric breakdown; Electric conductivity; Substrates; Ultrathin gate oxides; ULSI circuits |
顯示於: | 電機工程學系 |
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