https://scholars.lib.ntu.edu.tw/handle/123456789/292590
標題: | Two-component photoluminescence decay in InGaN/GaN multiple quantum well structures | 作者: | Feng, S.-W. Cheng, Y.-C. Liao, C.-C. Chung, Y.-Y. CHIH-WEN LIU CHIH-CHUNG YANG Lin, Y.-S. Ma, K.-J. Chyi, J.-I. |
公開日期: | 2001 | 卷: | 228 | 期: | 1 | 起(迄)頁: | 121-124 | 來源出版物: | Physica Status Solidi (B) Basic Research | 摘要: | Two-component decay of time-resolved photoluminescence (TRPL) intensity in three InGaN/GaN multiple quantum well samples were observed. The first-decay component was attributed to exciton relaxation of free-carrier and localized states; the second-decay one was dominated by the relaxation of localized excitons. The second-decay lifetime was related to the extent of carrier localization or indium aggregation and phase separation. The lifetime of free-carrier states was connected with the defect density. Based on the temperature-dependent data of PL and stimulated emission (SE), the localization energies of the three samples were calibrated to show the consistent trend with the second-decay lifetime and previous material analyses. |
URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-0035541066&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/292590 https://www.scopus.com/inward/record.uri?eid=2-s2.0-0035541066&doi=10.1002%2f1521-3951%28200111%29228%3a1%3c121%3a%3aAID-PSSB121%3e3.0.CO%3b2-I&partnerID=40&md5=ad1a26c7b22b59dcc386c66adfb3989e |
ISSN: | 03701972 | DOI: | 10.1002/1521-3951(200111)228:1<121 |
顯示於: | 電機工程學系 |
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